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 PD - 9.1243B
PRELIMINARY
IRF7309
N-CHANNEL MOSFET 1 8
HEXFET(R) Power MOSFET
Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
S1 G1 S2 G2
D1 D1
N-Ch VDSS 30V
P-Ch -30V
2
7
3
6
D2 D2
4
5
P-CHANNEL MOSFET
RDS(on) 0.050 0.10
Top View
SO-8
Absolute Maximum Ratings
Parameter
N-Channel ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulse Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation (PCB Mount)** Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range 4.7 4.0 3.2 16 1.4 0.011 20 6.9 -55 to + 150 -6.0
Max.
P-Channel -3.5 -3.0 -2.4 -12
Units
A A A A W W/C V V/ns C
Thermal Resistance
Parameter
RJA Junction-to-Amb. (PCB Mount, steady state)**
Min.
----
Typ.
----
Max.
90
Units
C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
147
IRF7309
Electrical Characteristics @ T = 25C (unless otherwise specified) J
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. 30 -- -- -30 -- -- -- 0.032 -- -- -0.037 -- -- -- 0.050 -- -- 0.080 -- -- 0.10 -- -- 0.16 1.0 -- -- -1.0 -- -- 5.2 -- -- 2.5 -- -- -- -- 1.0 -- -- -1.0 -- -- 25 -- -- -25 -- -- 100 -- -- 25 -- -- 25 -- -- 2.9 -- -- 2.9 -- -- 7.9 -- -- 9.0 -- 6.8 -- -- 11 -- -- 21 -- -- 17 -- -- 22 -- -- 25 -- -- 7.7 -- -- 18 -- -- 4.0 -- -- 6.0 -- -- 520 -- -- 440 -- -- 180 -- -- 200 -- -- 72 -- -- 93 -- Units Conditions VGS = 0V, ID = 250A V VGS = 0V, ID = -250A Reference to 25C, ID = 1mA V/C Reference to 25C, ID = -1mA VGS = 10V, ID = 2.4A VGS = 4.5V, ID = 2.0A VGS = -10V, ID = -1.8A VGS = -4.5V, ID = -1.5A VDS = VGS, ID = 250A V VDS = VGS, ID = -250A VDS = 15V, ID = 2.4A S VDS = -24V, ID = -1.8A VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V A V = 24V, V = 0V, T = 125C DS GS J VDS = -24V, VGS = 0V, TJ = 125C VGS = 20V N-Channel ID = 2.6A, VDS = 16V, VGS = 4.5V nC P-Channel ID = -2.2A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 2.6A, RG = 6.0, RD = 3.8 ns P-Channel VDD = -10V, ID = -2.2A, RG = 6.0, RD = 4.5 nH Between lead tip and center of die contact N-Channel VGS = 0V, VDS = 15V, = 1.0MHz pF P-Channel VGS = 0V, VDS = -15V, = 1.0MHz
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P Min. Typ. Max. Units Conditions -- -- 1.8 -- -- -1.8 A -- -- 16 -- -- -12 -- -- 1.0 TJ = 25C, IS = 1.8A, VGS = 0V V -- -- -1.0 TJ = 25C, IS = -1.8A, VGS = 0V -- 47 71 N-Channel ns -- 53 80 TJ = 25C, IF = 2.6A, di/dt = 100A/s P-Channel -- 56 84 nC TJ = 25C, IF = -2.2A, di/dt = 100A/s -- 66 99 Intrinsic turn-on time is neglegible (turn-on is dominated by L +LD) S
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 ) N-Channel ISD 2.4A, di/dt 73A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -1.8A, di/dt 90A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%.
148
IRF7309
N-Channel
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
TOP
I , Drain-to-Source Current (A) D
I , Drain-to-Source Current (A) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
100
4.5V
10
4.5V
10
1 0.1
20s PULSE WIDTH TJ = 25C
1 10
A
100
1 0.1
20s PULSE WIDTH TJ = 150C
1 10
A
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics, TJ = 25oC
Fig 2. Typical Output Characteristics, TJ = 150oC
T = 25C J TJ = 150C
R DS(on) , Drain-to-Source On Resistance (Normalized)
100
2.0
I D = 4.0A
I D , Drain-to-Source Current (A)
1.5
1.0
0.5
10 4 5 6 7
VDS = 15V 20s PULSE WIDTH
8 9 10
A
0.0 -60
VGS = 10V
-40 -20 0 20 40 60 80
100 120 140 160
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
149
IRF7309
N-Channel
1000
800
VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = C gs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
I D = 2.4A VDS = 24V
16
C, Capacitance (pF)
Ciss
600
12
Coss
400
8
200
Crss
4
0 1 10 100
A
0 0 5 10
FOR TEST CIRCUIT SEE FIGURE 11 A
15 20 25
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-toSource Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID , Drain Current (A)
10
10
100s
TJ = 150C
1ms
TJ = 25C
1
1
10ms
100ms
0.1 0.0 0.5 1.0 1.5
VGS = 0V
2.0
TA = 25C TJ = 150C Single Pulse A
0.1 0.1
A
1 10 100
2.5
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
150
Fig 8. Maximum Safe Operating Area
IRF7309
N-Channel
4.0
ID, Drain Current (Amps)
3.0
2.0
Fig 10a. Switching Time Test Circuit
1.0
0.0 25 50 75 100 125
A
150
TA , Ambient Temperature (C)
Fig 9. Max. Drain Current Vs. Ambient Temp. Fig 10b. Switching Time Waveforms
Fig 11a. Gate Charge Test Circuit
Fig 11b. Basic Gate Charge Waveform P-Channel
100
-ID , Drain-to-Source Current (A)
10
-4.5V
-I D , Drain-to-Source Current (A)
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
100
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
10
-4.5V
1 0.1
20s PULSE WIDTH TJ = 25C
1 10
A
100
1 0.1
20s PULSE WIDTH TJ = 150C
1 10
100
A
-VDS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics, T = 25oC J
151
Fig 13. Typical Output Characteristics,T = 150oC J
IRF7309
P-Channel
R DS(on) , Drain-to-Source On Resistance (Normalized)
100 2.0
I D = -3.0A
-I D , Drain-to-Source Current (A)
TJ = 25C TJ = 150C
1.5
10
1.0
0.5
1 4 5 6 7
VDS = -15V 20s PULSE WIDTH
8 9 10
A
0.0 -60
VGS = -10V
-40 -20 0 20 40 60 80
100 120 140 160
A
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 14. Typical Transfer Characteristics
Fig 15. Normalized On-Resistance Vs. Temperature
1000
20
-VGS , Gate-to-Source Voltage (V)
800
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd
ID = -3.0A VDS = -24V
16
C, Capacitance (pF)
600
Ciss Coss
12
400
8
200
Crss
4
FOR TEST CIRCUIT SEE FIGURE 22
0 1 10 100
A
0 0 5 10 15 20 25
A
-VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 16. Typical Capacitance Vs. Drain-toSource Voltage
Fig 17. Typical Gate Charge Vs. Gate-toSource Voltage
152
IRF7309
P-Channel
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
-I D , Drain Current (A)
10
10
100s
TJ = 150C
1ms
TJ = 25C
1
1
10ms
100ms
0.1 0.0 0.3 0.6 0.9
VGS = 0V
1.2
A
0.1
TA = 25C TJ = 150C Single Pulse A
0.1 1 10 100
1.5
-VSD , Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 18. Typical Source-Drain Diode Forward Voltage
Fig 19. Maximum Safe Operating Area
3.0
-ID, Drain Current (Amps)
2.0
Fig 21a. Switching Time Test Circuit
1.0
0.0 25 50 75 100 125
A
150
TA , AmbientTemperature (C)
Fig 20. Max.Drain Current Vs. Ambient Temp.
Fig 21b. Switching Time Waveforms
153
IRF7309
P-Channel
Fig 22b. Gate Charge Test Circuit
Fig 22b. Basic Gate Charge Waveform
N- and P-Channel
100 D = 0.50
Thermal Response (Z thJA )
0.20 10 0.10 0.05
0.02 1 0.01
PDM
t
SINGLE PULSE (THERMAL RESPONSE)
1 t2
Notes: 1. Duty factor D = t / t 2. Peak T =JP xZ DM
1
2 +T thJA A
0.1 0.00001
A
1000
0.0001
0.001
0.01
0.1
1
10
100
t 1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Refer to the Appendix Section for the following: Appendix A: Appendix B: Appendix C: Appendix D: Figure 24, Peak Diode Recovery dv/dt Test Circuit -- See page 329. Package Outline Mechanical Drawing -- See page 332. Part Marking Information -- See page 332. Tape and Reel Information -- See page 336. 154


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